tp0610t general description this low threshold enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffcient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally- induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. p-channel enhancement mode vertical dmos fets product marking to-236ab (sot-23) (t) t50w w = code for week sealed = ?green? packaging drain source gate ordering information device package options bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (ma) to-236ab (sot-23) tp0610t TP0610T-G -60 10 -50 to-236ab (sot-23) (t) features ? high input impedance and high gain ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? excellent thermal stability ? integral source-drain diode ? free from secondary breakdown applications ? log ic level interfaces - ideal for ttl and cmos ? solid state relays ? battery operated systems ? photo voltaic systems ? analog switches ? power management ? telecom switches pin confguration package may or may not include the following marks: si or parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. absolute maximum ratings for packaged products, -g indicates package is rohs compliant (green). consult factory for die / wafer form part numbers. refer to die specifcation vf21 for layout and dimensions. supertex inc. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
2 tp0610t thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (ma) power dissipation @ t a = 25 o c (w) jc o c/w j a o c/w i dr ? (ma) i drm (ma) to-236ab (sot-23) -120 -400 0.36 200 350 -120 -400 i d (continuous) is limited by max rated t . switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v vdd r gen 0v -10v sym parameter min typ max units conditions electrical characteristics (t a = 25c unless otherwise specifed) bv dss drain-to-source breakdown voltage -60 - - v v gs = 0v, i d = -10a v gs(th) gate threshold voltage -1.0 - -2.4 v v gs = v ds , i d = -1.0ma ?v gs(th) change in v gs(th) with temperature - - 6.5 mv/ o c v gs = v ds , i d = -1.0ma i gss gate body leakage - - 10 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - -1.0 a v gs = 0v, v ds = max rating - -200 v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current -50 - - ma v gs = -4.5v, v ds = -10v r ds(on) static drain-to-source on-state resistance - - 25 v gs = -4.5v, i d = -25ma - 10 v gs = -10v, i d = -200ma ?r ds(on) change in r ds(on) with temperature - - 1.0 %/ o c v gs = -10v, i d = -200ma g fs forward transconductance 60 - - mmho v ds = -10v, i d = -100ma c iss input capacitance - - 60 pf v gs = 0v, v ds = -25v, f = 1.0 mhz c oss common source output capacitance - - 30 c rss reverse transfer capacitance - - 10 t d(on) turn-on delay time - - 10 ns v dd = -25v, i d = -180ma, r gen = 25? t r rise time - - 15 t d(off) turn-off delay time - - 15 t f fall time - - 20 v sd diode forward voltage drop - - -2.0 v v gs = 0v, i sd = -120ma t rr reverse recovery time - 400 - ns v gs = 0v, i sd = -400ma notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
3 tp0610t typical performance curves output characteristics -2.0 -1.6 -1.2 -0.8 -0.4 0 saturation characteristics -2.0 -1.6 -1.2 -0.8 -0.4 0 maximum rated safe operating area -0.1 -1.0 -10 -100 -1.0 -0.1 -0.01 -0.001 thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 transconductance vs. drain current power dissipation vs. temperature 0 25 50 75 100 125 150 0.5 0.4 0.3 0.2 0.1 0 sot-23 sot-23 (dc) 0 -10 -20 -30 -40 -50 0 -2.0 -4.0 -6.0 -8.0 -10 sot-23 (pulsed) t a = 25 o c 0.5 0.4 0.3 0.2 0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -6v -4v -3v -8v -6v -3v -4v -8v t a = -55 o c 25 o c 125 o c sot-23 p d = 0.36w t a = 25 o c v ds (volts) i d (amperes) i d (amperes) v gs = -10v g fs (siemens) i d (amperes) t a ( o c) p d (watts) v ds (volts) i d (amperes) t p (seconds) v ds (volts) v gs = -10v supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
4 tp0610t typical performance curves (cont.) gate drive dynamic characteristics on-resistance vs. drain curren t transfer characteristic s capacitance vs. drain-to-source voltage 100 75 50 25 0 c (picofarads) 0 -10 -20 -30 -40 0 -2.0 -0.4 -0.6 -0.8 -10 -2.0 -1.6 -1.2 -0.8 -0.4 0 -50 0 50 100 15 0 1.1 1.0 0.9 20 16 12 8.0 4.0 0 1.2 1.1 1.0 0.9 0.8 0.7 -10 -8.0 -6.0 -4.0 -2.0 0 0 0.5 1.0 1.5 2.0 2.5 35 pf 25 o c 0 -0.4 -0.8 -1.2 -1.6 -2. 0 f = 1.0mhz 1.6 1.4 1.2 1.0 0.8 r ds(on) (ohms) bv dss (normalized) t j ( o c) i d (amperes) bv dss variation with temperatur e v gs = -4.5v t j ( o c) v gs(th) (normalized) r ds(on) (normalized) v gs(th) and r ds(on) variation with temperature v gs (volts) i d (amperes) v ds = -25v v gs(th) @ -1.0ma r ds(on) @ -10v, -0.5a c iss c oss c rss q g (nanocoulombs) v gs (volts) v ds (volts) v ds = -40v 125 pf v ds = -10v 125 o c t a = - 55 o c v gs = -10v -50 0 50 100 15 0 supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
5 tp0610t (the package drawing(s) in this data sheet may not refect the most current specifcations. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-tp0610t b031411 3-lead to-236ab (sot-23) package outline (t) 20x130mm body 112mm height (max) 10mm pitch symbol a a1 a2 b d e e1 e e1 l l1 dimension (mm) min 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.95 bsc 1.90 bsc 0.20 ? 0.54 ref 0 o nom - - 0.95 - 2.90 - 1.30 0.50 - max 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 o jedec registration to-236, variation ab, issue h, jan. 1999. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.: dspd-3to236abk1, version c041309. vi ew b vi ew a - a side v iew to p v iew vi ew b gauge plane seating plane 0.25 l1 l e1 e d 3 1 2 e e1 b a a seating plane a a2 a1 supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. (website: http//www .supertex.com) ?201 1 supertex inc. a ll rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com
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